An emerging quaternary semiconductor nanoribbon with gate-tunable anisotropic conductance

• Published in: Science bulletin (Beijing)
• Main Authors: Jiang, Shaolong, Hou, Fuchen, Zeng, Shengfeng, Zhang, Yubo, Zhao, Erding, Sun, Yilin, Zhao, Liyun, Zhang, Cheng, Jia, Mengyuan, Dai, Jun-Feng, Huang, Mingyuan, Zhang, Qing, Zou, Xiaolong, Zhang, Yanfeng, Lin, Junhao
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.07.2024
• Subjects: Anisotropic conductance; AuPdNaS2; Chemical vapor deposition; Gate tenability; Gate tenability; AuPdNaS2; Chemical vapor deposition; Anisotropic conductance
• ISSN: 2095-9273
• DOI: 10.1016/j.scib.2024.07.025

[Display omitted] Two-dimensional noble transition metal chalcogenide (NTMC) semiconductors represent compelling building blocks for fabricating flexible electronic and optoelectronic devices. While binary and ternary compounds have been reported, the existence of quaternary NTMCs with a greater elemental degree of freedom remains largely unexplored. This study presents the pioneering experimental realization of a novel semiconducting quaternary NTMC material, AuPdNaS2, synthesized directly on Au foils through chemical vapor deposition. The ribbon-shaped morphology of the AuPdNaS2 crystal can be finely tuned to a thickness as low as 9.2 nm. Scanning transmission electron microscopy reveals the atomic arrangement, showcasing robust anisotropic features; thus, AuPdNaS2 exhibits distinct anisotropic phonon vibrations and electrical properties. The field-effect transistor constructed from AuPdNaS2 crystal demonstrates a pronounced anisotropic conductance (σmax/σmin = 3.20) under gate voltage control. This investigation significantly expands the repertoire of NTMC materials and underscores the potential applications of AuPdNaS2 in nano-electronic devices.