Evaluation of the Timepix chip radiation hardness using a 60Co source

Radiation damage is a widely studied topic for its effects on detectors and supporting electronics in various practical applications. Radiation hardness and stability of the detector properties are critical parameters in applications of semiconductor radiation detectors. The 0.25μm CMOS technology u...

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Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 732; pp. 501 - 505
Main Authors Carna, Maria, Ducevova, Katerina, Hejtmanek, Martin, Koncek, Ondrej, Marcisovsky, Michal
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.2013
Subjects
Accelerators
Chip formation
Chips
CMOS
Detectors
Electronics
Medipix
Pixel detector
Radiation hardness
Semiconductors
Pixel detector
Medipix
Radiation hardness
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Summary:Radiation damage is a widely studied topic for its effects on detectors and supporting electronics in various practical applications. Radiation hardness and stability of the detector properties are critical parameters in applications of semiconductor radiation detectors. The 0.25μm CMOS technology used in fabrication of the Medipix2 and Timepix chips provides high degree of inherent radiation hardness. We present the study of operational, detection and signal processing properties of the irradiated Timepix chip exposed to a high-flux 60Co source reaching the operational limits of the chip. •Radiation hardness of pixel detector based on Medipix2 against 60Co has been performed.•The Co was used as a radiation source due to its usage in number of practical applications.•Systematic study of γ radiation of various energies on the detector systems is desired.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2013.06.088