High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect Transistor (Adv. Electron. Mater. 7/2023)

Graphene Field Effect Transistors In article number 2300074 Jeong Woo Shin, Jihwan An, and co‐workers show the application of ultra‐violet light‐assisted atomic layer deposition (UV‐ALD) to effectively functionalize graphene surfaces and fabricate high‐performance graphene field effect transistors (...

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Bibliographic Details
Published inAdvanced electronic materials Vol. 9; no. 7
Main Authors Park, Geonwoo, Go, Dohyun, Jo, Sungchan, Lee, Tae Hoon, Shin, Jeong Woo, An, Jihwan
Format Journal Article
LanguageEnglish
Published 01.07.2023
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Summary:Graphene Field Effect Transistors In article number 2300074 Jeong Woo Shin, Jihwan An, and co‐workers show the application of ultra‐violet light‐assisted atomic layer deposition (UV‐ALD) to effectively functionalize graphene surfaces and fabricate high‐performance graphene field effect transistors (GFETs). The GFET with an UV‐ALD Al2O3 dielectric layer shows a low Dirac voltage and a high hole mobility that is 3 times improved compared to those by thermal ALD. A high quality interface between 2D material and atomic layer deposited thin film is demonstrated.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.202370031