Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for V T Prediction Using Lateral Carrier Density Profiling Technique

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Bibliographic Details
Published inIEEE electron device letters Vol. 44; no. 4; pp. 630 - 633
Main Authors Myoung, Seung Joo, Ryoo, Chang Il, Kim, Changwook, Choi, Sung-Jin, Kim, Dong Myong, Bae, Jong-Ho, Kim, Dae Hwan
Format Journal Article
LanguageEnglish
Published 01.04.2023
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3242332