110 GHz Si MSM photodetectors

Summary form only given. The authors report an Si MSMPD (metal-semiconductor-metal photodetector) with a 3.7-ps response time and 110-GHz bandwidth. They also present an experimental and theoretical study of the factors that are important to the speed of Si MSMPDs, such as the photon absorption leng...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 40; no. 11; pp. 2145 - 2146
Main Authors Liu, M.Y., Chou, S.Y., Alexandrou, S., Wang, C.C., Hsiang, T.Y.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1993
Subjects
Absorption
Bandwidth
Delay
Fingers
Lasers and electrooptics
Photodetectors
Sampling methods
Semiconductor lasers
Transmission line measurements
Wavelength measurement
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Summary:Summary form only given. The authors report an Si MSMPD (metal-semiconductor-metal photodetector) with a 3.7-ps response time and 110-GHz bandwidth. They also present an experimental and theoretical study of the factors that are important to the speed of Si MSMPDs, such as the photon absorption length, carrier diffusion length, carrier mean free path, finger spacing, and finger width. They also discuss new possibilities for even faster ( approximately 400 GHz) Si-based high-speed MSMPDs.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.239836