Fabrication of AlGaN/GaN MIS‐HFET using an Al 2 O 3 high k dielectric
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Published in | Physica status solidi. C no. 7; pp. 2351 - 2354 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.12.2003
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Online Access | Get full text |
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ISSN: | 1610-1634 |
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DOI: | 10.1002/pssc.200303437 |