Comparative study of photoluminescence from In 0.3 Ga 0.7 As/GaAs surface and buried quantum dots

• Published in: Nanotechnology Vol. 27; no. 46; p. 465701
• Main Authors: Wang, Guodong, Liang, Baolai, Juang, Bor-Chau, Das, Aparna, Debnath, Mukul C, Huffaker, Diana L, Mazur, Yuriy I, Ware, Morgan E, Salamo, Gregory J
• Format: Journal Article
• Language: English
• Published: England 18.11.2016

The optical properties of In Ga As/GaAs surface quantum dots (SQDs) and buried QDs (BQDs) are investigated by photoluminescence (PL) measurements. The integrated PL intensity, linewidth, and lifetime of SQDs are significantly different from the BQDs both at room temperature and at low temperature. T...