Comparative study of photoluminescence from In 0.3 Ga 0.7 As/GaAs surface and buried quantum dots

The optical properties of In Ga As/GaAs surface quantum dots (SQDs) and buried QDs (BQDs) are investigated by photoluminescence (PL) measurements. The integrated PL intensity, linewidth, and lifetime of SQDs are significantly different from the BQDs both at room temperature and at low temperature. T...

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Published inNanotechnology Vol. 27; no. 46; p. 465701
Main Authors Wang, Guodong, Liang, Baolai, Juang, Bor-Chau, Das, Aparna, Debnath, Mukul C, Huffaker, Diana L, Mazur, Yuriy I, Ware, Morgan E, Salamo, Gregory J
Format Journal Article
LanguageEnglish
Published England 18.11.2016
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Summary:The optical properties of In Ga As/GaAs surface quantum dots (SQDs) and buried QDs (BQDs) are investigated by photoluminescence (PL) measurements. The integrated PL intensity, linewidth, and lifetime of SQDs are significantly different from the BQDs both at room temperature and at low temperature. The differences in PL response, measured at both steady state and in transient, are attributed to carrier transfer between the surface states and the SQDs.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/27/46/465701