Hybridization Gap in the Semiconducting Compound SrIr 4 In 2 Ge 4

Large single crystals of SrIr In Ge were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of E = 0.25(3) eV. It crystallizes in the tetragonal EuIr In Ge structure type with space group I4̅2m and unit cell parameters a = 6...

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Published inInorganic chemistry Vol. 55; no. 23; pp. 12477 - 12481
Main Authors Calta, Nicholas P, Im, Jino, Fang, Lei, Chasapis, Thomas C, Bugaris, Daniel E, Chung, Duck Young, Kwok, Wai-Kwong, Kanatzidis, Mercouri G
Format Journal Article
LanguageEnglish
Published United States 05.12.2016
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Summary:Large single crystals of SrIr In Ge were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of E = 0.25(3) eV. It crystallizes in the tetragonal EuIr In Ge structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr In Ge and the parent structure Ca Ir Ge , suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.
ISSN:0020-1669
1520-510X
DOI:10.1021/acs.inorgchem.6b02617