Versatile sputtering technology for Al 2 O 3 gate insulators on graphene

We report a novel, sputtering-based fabrication method of Al O gate insulators on graphene. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al O layers possess comparable quality to oxides obtained by atomic layer deposition with respect to...

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Bibliographic Details
Published inScience and technology of advanced materials Vol. 13; no. 2; p. 025007
Main Authors Friedemann, Miriam, Woszczyna, Mirosław, Müller, André, Wundrack, Stefan, Dziomba, Thorsten, Weimann, Thomas, Ahlers, Franz J
Format Journal Article
LanguageEnglish
Published United States 01.04.2012
Subjects
High-κ dielectric
Atomic layer deposition
Graphene
Sputtering
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Summary:We report a novel, sputtering-based fabrication method of Al O gate insulators on graphene. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al O layers possess comparable quality to oxides obtained by atomic layer deposition with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm V s in monolayer graphene and 350 cm V s in bilayer graphene, respectively. The mobility decrease can be attributed to the resonant scattering on atomic-scale defects, likely originating from the Al precursor layer evaporated prior to sputtering.
ISSN:1468-6996
1878-5514
DOI:10.1088/1468-6996/13/2/025007