Surface Cleaning of SiGe(100) and Passivation of Ge(100) with Aqeuous Ammonium Sulfide

The effect of standard aqueous cleans including SC-1, HCl, HF, and HCl/HF mixtures on SiGe(100) surfaces with 50, 75 and 85% Ge molar ratios was characterized with x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry. HF was most effective at removing both Ge and Si oxides and reduc...

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Bibliographic Details
Published inECS transactions Vol. 69; no. 8; pp. 287 - 293
Main Authors Heslop, Stacy Lynn, Engesser, Philipp, Okorn-Schmidt, Harald F., Muscat, Anthony J.
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 11.09.2015
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Summary:The effect of standard aqueous cleans including SC-1, HCl, HF, and HCl/HF mixtures on SiGe(100) surfaces with 50, 75 and 85% Ge molar ratios was characterized with x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry. HF was most effective at removing both Ge and Si oxides and reduced the carbon contamination. SC-1 selectively depleted Ge from the surface. Passivation of Ge(100) surfaces with aqueous (NH4)2S was characterized with XPS as a function of the solution concentration and with the addition of H2O2. The passivation process was independent of the (NH4)2S concentration and approximately 3 Å of S was deposited or about one layer based on XPS. Addition of H2O2 to very dilute (NH4)2S oxidized the surface while addition to higher concentrations showed similar effects as a sequential HCl/H2O2 treatment.
ISSN:1938-5862
1938-6737
DOI:10.1149/06908.0287ecst