Efficient and Dense Electron Emission from a SiO 2 Tunneling Diode with Low Poisoning Sensitivity

• Published in: Nano letters Vol. 22; no. 3; pp. 1270 - 1277
• Main Authors: Li, Zhiwei, Zhang, Zhengfeng, Tian, Jiamin, Wu, Gongtao, He, Yidan, Yu, Bocheng, Zhan, Fangyuan, Wang, Yuwei, Sun, Mei, Yang, Wei, Li, Zhihong, Chen, Qing, Yan, Pengfei, Wei, Xianlong
• Format: Journal Article
• Language: English
• Published: United States 09.02.2022
• Subjects: electron source; silicon oxide; Electron emission; tunneling diode; Monte Carlo simulation
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.1c04475

We report a tunneling diode enabling efficient and dense electron emission from SiO with low poisoning sensitivity. Benefiting from the shallow SiO channel exposed to vacuum and the low electron affinity of SiO (0.9 eV), hot electrons tunneling into the SiO channel from the cathode of the diode are efficiently emitted into vacuum with much less restriction in both space and energy than those in previous tunneling electron sources. Monte Carlo simulations on the device performance show an emission efficiency as high as 87.0% and an emission density up to 3.0 × 10 A/cm . By construction of a tunneling diode based on Si conducting filaments in electroformed SiO , an emission efficiency up to 83.7% and an emission density up to 4.4 × 10 A/cm are experimentally realized. Electron emission from the devices is demonstrated to be independent of vacuum pressure from 10 to 10 Pa without poisoning.