On the preparation and photoelectric properties of Tl1–x In1–x Sn x Se2 (x = 0.1–0.25) alloys

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 50; no. 1; pp. 38 - 42
• Main Authors: Danylchuk, S. P., Myronchuk, G. L., Mozolyuk, M. Yu, Bozhko, V. V.
• Format: Journal Article
• Language: English
• Published: New York Springer Nature B.V 01.01.2016
• Subjects: Alloy development; Photoconductivity; Photoelectric effect; Photoelectricity; Single crystals

The technological conditions for growing single crystals of Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys are developed. The spectral distribution of the photoconductivity of the grown crystals at T = 300 K and thermally stimulated conductivity are studied. The effect of In3+cation substitution with Sn4+ i...