On the preparation and photoelectric properties of Tl1–x In1–x Sn x Se2 (x = 0.1–0.25) alloys

The technological conditions for growing single crystals of Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys are developed. The spectral distribution of the photoconductivity of the grown crystals at T = 300 K and thermally stimulated conductivity are studied. The effect of In3+cation substitution with Sn4+ i...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 50; no. 1; pp. 38 - 42
Main Authors Danylchuk, S. P., Myronchuk, G. L., Mozolyuk, M. Yu, Bozhko, V. V.
Format Journal Article
LanguageEnglish
Published New York Springer Nature B.V 01.01.2016
Subjects
Alloy development
Photoconductivity
Photoelectric effect
Photoelectricity
Single crystals
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Summary:The technological conditions for growing single crystals of Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys are developed. The spectral distribution of the photoconductivity of the grown crystals at T = 300 K and thermally stimulated conductivity are studied. The effect of In3+cation substitution with Sn4+ in Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys on their photoelectric properties is shown.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616010073