In As1–x Sb x heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

Unrelaxed InAs1–xSbx (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 51; no. 4; pp. 524 - 530
Main Authors Guseynov, R. R., Tanriverdiyev, V. A., Kipshidze, G., Aliyeva, Ye. N., Aliguliyeva, Kh. V., Abdullayev, N. A., Mamedov, N. T.
Format Journal Article
LanguageEnglish
Published New York Springer Nature B.V 01.04.2017
Subjects
Buffer layers
Molecular beam epitaxy
Thin films
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Summary:Unrelaxed InAs1–xSbx (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs1–xSbx alloys is established.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617040066