InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO_2 patterned GaN film

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Published inOptics express Vol. 18; no. S4; p. A562
Main Authors Sheu, Jinn-Kong, Chang, Kuo-Hua, Tu, Shang-Ju, Lee, Ming-Lun, Yang, Chih-Ciao, Hsu, Che-Kang, Lai, Wei-Chih
Format Journal Article
LanguageEnglish
Published 08.11.2010
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Author Yang, Chih-Ciao
Sheu, Jinn-Kong
Tu, Shang-Ju
Hsu, Che-Kang
Lai, Wei-Chih
Chang, Kuo-Hua
Lee, Ming-Lun
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CitedBy_id crossref_primary_10_1364_OE_20_00A630
crossref_primary_10_1038_s41598_019_40095_7
crossref_primary_10_1007_s00339_011_6508_8
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Lee (oe-18-S4-A562-R10) 2007; 91
Chang (oe-18-S4-A562-R4) 2004; 16
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Kato (oe-18-S4-A562-R9) 1994; 144
Cao (oe-18-S4-A562-R1) 1999; 75
Tsai (oe-18-S4-A562-R2) 2006; 18
Sheu (oe-18-S4-A562-R3) 2006; 88
Lee (oe-18-S4-A562-R5) 2006; 18
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Title InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO_2 patterned GaN film
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