InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO_2 patterned GaN film

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Bibliographic Details
Published inOptics express Vol. 18; no. S4; p. A562
Main Authors Sheu, Jinn-Kong, Chang, Kuo-Hua, Tu, Shang-Ju, Lee, Ming-Lun, Yang, Chih-Ciao, Hsu, Che-Kang, Lai, Wei-Chih
Format Journal Article
LanguageEnglish
Published 08.11.2010
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ISSN:1094-4087
1094-4087
DOI:10.1364/OE.18.00A562