Band alignments of La x Al y O films on Si substrates grown by atomic layer deposition with different La/Al atomic ratios

LaxAlyO films were grown on p-Si substrates by atomic layer deposition technique with different La and Al precursor pulse ratios. Then atomic concentrations and band alignments of the films were determined from X-ray photoelectron spectroscopy measurements. It was found that the bandgap and valence...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 28; no. 6; pp. 4702 - 4705
Main Authors Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng
Format Journal Article
LanguageEnglish
Published New York Springer Nature B.V 01.03.2017
Subjects
Aluminum
Annealing
Atomic layer epitaxy
Atomic properties
Composition
Conduction bands
Current leakage
Energy
Gates
Insulators
Leakage current
MIS (semiconductors)
Offsets
Silicon substrates
Spectrum analysis
Valence band
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Summary:LaxAlyO films were grown on p-Si substrates by atomic layer deposition technique with different La and Al precursor pulse ratios. Then atomic concentrations and band alignments of the films were determined from X-ray photoelectron spectroscopy measurements. It was found that the bandgap and valence band offset increase synchronously with increasing Al composition, while the conduction band offset varies slightly. Furthermore, as the composition of Al increased, significant decrease in the gate leakage current for the metal–insulator–semiconductor capacitors using LaxAlyO films as insulators was observed due to the formation of larger bandgaps and valence band offsets.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-016-6111-z