Correction to: Thermoelectric properties of nitrogen-doped Ge2Sb2Te5 thin films
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Published in | Journal of materials science. Materials in electronics Vol. 35; no. 27; p. 1778 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
Springer US
01.09.2024
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Bibliography: | correction |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-024-13536-x |