Phase composition, crystal structure, and microwave dielectric properties of 0.8Mg2SiO4–0.2Ca0.9Sm0.2/3Al4x/3Ti1−xO3 ceramics

• Published in: Journal of materials science. Materials in electronics Vol. 33; no. 28; pp. 22119 - 22126
• Main Authors: Tang, Cong, Liu, Yangfu, Yan, Xueyu, Liu, Shunguo, Ge, Weiping, Tong, Jianxi, Meng, Fancheng
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.10.2022; Springer Nature B.V
• Subjects: Aluminum; Ceramics; Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystal structure; Dielectric properties; Grain size; Materials Science; Microwave communications; Morphology; Optical and Electronic Materials; Phase composition; Scanning electron microscopy; Sintering; Temperature
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-022-08981-5

0.8Mg 2 SiO 4 –0.2Ca 0.9 Sm 0.2/3 Al 4 x /3 Ti 1− x O 3 ( x  = 0, 0.05, 0.1, 0.15, 0.2, and 0.25) ceramics with zero τ f and high Q × f value were prepared by a traditional solid-state reaction method. The influences of Al content on phase evolution, sintering behavior, microstructure and microwave dielectric properties of ceramics have been systematically investigated. With the increase of x , the exchange of Ti 4+ and Al 3+ at B site leads to the decrease of dielectric constant and the increase of quality factor Q × f . The τ f increases first and then decreases to close to 0 with a rise of x from 0.05 to 0.025. The results show that 0.8Mg 2 SiO 4 –0.2Ca 0.9 Sm 0.2/3 Al 0.8/3 Ti 0.8 O 3 samples sintered at 1410 °C for 3 h exhibited excellent microwave dielectric properties: ε r  = 10.69, Q × f  = 70,769 GHz, τ f  = − 0.66 ppm/°C. Therefore 0.8Mg 2 SiO 4 –0.2Ca 0.9 Sm 0.2/3 Al 4 x /3 Ti 1− x O 3 ceramics are considered as potential candidates for microwave dielectric applications.