Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors

Summary form only given. The authors have fabricated the first carbon-doped InGaP/GaAs/InGaP double-heterojunction bipolar transistors which capitalize on the large Delta E/sub v/ of the InGaP/GaAs heterointerface and the high doping concentration in GaAs by carbon atoms. With a 25-AA base setback l...

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Published inIEEE transactions on electron devices Vol. 39; no. 11; p. 2657
Main Authors Chen, Y.K., Kapre, R., Tsang, W.T., Wu, M.C.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1992
Subjects
Bipolar transistors
Carbon dioxide
Charge carrier processes
Chemicals
DH-HEMTs
Doping
Double heterojunction bipolar transistors
Electron mobility
Gallium arsenide
Voltage
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Abstract Summary form only given. The authors have fabricated the first carbon-doped InGaP/GaAs/InGaP double-heterojunction bipolar transistors which capitalize on the large Delta E/sub v/ of the InGaP/GaAs heterointerface and the high doping concentration in GaAs by carbon atoms. With a 25-AA base setback layer, a current gain of 120 is obtained at J/sub c/ =2 kA/cm/sup 2/. The nonalloy base contact is demonstrated to preserve a current gain of 20 to I/sub c/=10 mu A.< >
AbstractList Summary form only given. The authors have fabricated the first carbon-doped InGaP/GaAs/InGaP double-heterojunction bipolar transistors which capitalize on the large Delta; < e1 > E < /e1 > (v) of the InGaP/GaAs heterointerface and the high doping concentration in GaAs by carbon atoms. With a 25-A base setback layer, a current gain of 120 is obtained at < e1 > J < /e1 > (c) =2 kA/cm(2). The nonalloy base contact is demonstrated to preserve a current gain of 20 to < e1 > I < /e1 > (c)=10 muA
Summary form only given. The authors have fabricated the first carbon-doped InGaP/GaAs/InGaP double-heterojunction bipolar transistors which capitalize on the large Delta E/sub v/ of the InGaP/GaAs heterointerface and the high doping concentration in GaAs by carbon atoms. With a 25-AA base setback layer, a current gain of 120 is obtained at J/sub c/ =2 kA/cm/sup 2/. The nonalloy base contact is demonstrated to preserve a current gain of 20 to I/sub c/=10 mu A.< >
Author Chen, Y.K.
Kapre, R.
Tsang, W.T.
Wu, M.C.
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Snippet Summary form only given. The authors have fabricated the first carbon-doped InGaP/GaAs/InGaP double-heterojunction bipolar transistors which capitalize on the...
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StartPage 2657
SubjectTerms Bipolar transistors
Carbon dioxide
Charge carrier processes
Chemicals
DH-HEMTs
Doping
Double heterojunction bipolar transistors
Electron mobility
Gallium arsenide
Voltage
Title Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors
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