Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors

Summary form only given. The authors have fabricated the first carbon-doped InGaP/GaAs/InGaP double-heterojunction bipolar transistors which capitalize on the large Delta E/sub v/ of the InGaP/GaAs heterointerface and the high doping concentration in GaAs by carbon atoms. With a 25-AA base setback l...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 39; no. 11; p. 2657
Main Authors Chen, Y.K., Kapre, R., Tsang, W.T., Wu, M.C.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1992
Subjects
Bipolar transistors
Carbon dioxide
Charge carrier processes
Chemicals
DH-HEMTs
Doping
Double heterojunction bipolar transistors
Electron mobility
Gallium arsenide
Voltage
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Summary:Summary form only given. The authors have fabricated the first carbon-doped InGaP/GaAs/InGaP double-heterojunction bipolar transistors which capitalize on the large Delta E/sub v/ of the InGaP/GaAs heterointerface and the high doping concentration in GaAs by carbon atoms. With a 25-AA base setback layer, a current gain of 120 is obtained at J/sub c/ =2 kA/cm/sup 2/. The nonalloy base contact is demonstrated to preserve a current gain of 20 to I/sub c/=10 mu A.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.163518