Effects of Bi3+ Ion-Doped on the Microstructure and Photoluminescence of La0.97Pr0.03VO4 Phosphor

The objective of this paper is to enhance the emission intensity of La0.97Pr0.03VO4 single-phased white light emitting phosphor. The Bi3+ ion-doped La0.97Pr0.03VO4 single-phased white light emitting phosphors are synthesized using a sol-gel method. The structure and photoluminescence properties of (...

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Published inAdvances in technology innovation Vol. 6; no. 3; pp. 191 - 198
Main Authors Chen, Hao-Long, Shih, Hung-Rung, Wu, Sean, Chang, Yee-Shin
Format Journal Article
LanguageEnglish
Published Taiwan Taiwan Association of Engineering and Technology Innovation 18.06.2021
Subjects
Bismuth
Chromaticity
Crystal structure
Emission
Light emitting diodes
Luminous intensity
Phosphors
Photoluminescence
Scanning electron microscopy
Sol-gel processes
White light
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Summary:The objective of this paper is to enhance the emission intensity of La0.97Pr0.03VO4 single-phased white light emitting phosphor. The Bi3+ ion-doped La0.97Pr0.03VO4 single-phased white light emitting phosphors are synthesized using a sol-gel method. The structure and photoluminescence properties of (La0.97-yBiy)Pr0.03VO4 (y = 0-0.05) phosphor are also examined. The XRD results show that the structure of La0.97Pr0.03VO4 phosphors with different concentrations of Bi3+ ion doping keeps the monoclinic structure. The SEM results show that the phosphor particles become smoother when the Bi3+ ion is doped. The excitation band for La0.97Pr0.03VO4 phosphor exhibits a blue shift from 320 nm to 308 nm as the Bi3+ ion contents are increased. The maximum emission intensity is achieved for a Bi3+ ion content of 0.5 mol%, which is about 30% greater than that with no Bi3+ ion doped. The CIE chromaticity coordinates are all located in the near white light region for different Bi3+ ion-doped La0.97Pr0.03VO4 phosphors.
ISSN:2415-0436
2518-2994
DOI:10.46604/aiti.2021.5635