Semipolar III-N Layers Deposited on a Nanostructured Silicon Substrate: Process and Luminescence Specificity

A study is performed of the advantages of synthesizing layers of AlN via gas-phase chloride epitaxy and layers of GaN via organometallic epitaxy on a nanostructured Si(100) substrate. It is shown that when AlN(10–11) and GaN(10–11) block layers have half-widths of the X-ray diffraction swing curve e...

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Bibliographic Details
Published inBulletin of the Russian Academy of Sciences. Physics Vol. 86; no. 7; pp. 810 - 812
Main Authors Bessolov, V. N., Konenkova, E. V., Konenkov, S. D., Panteleev, V. N.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.07.2022
Springer Nature B.V
Subjects
Epitaxy
Gallium nitrides
Hadrons
Heavy Ions
Nanostructure
Nuclear Physics
Physics
Physics and Astronomy
Silicon substrates
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Summary:A study is performed of the advantages of synthesizing layers of AlN via gas-phase chloride epitaxy and layers of GaN via organometallic epitaxy on a nanostructured Si(100) substrate. It is shown that when AlN(10–11) and GaN(10–11) block layers have half-widths of the X-ray diffraction swing curve equal to 60 and 45 arcmin, respectively, the surfaces of the layers have steps whose heights are determined by the size of the block upon coalescence.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873822070097