Growth of CdSiAs 2 Single Crystals by Chemical Transportation

• Published in: Japanese Journal of Applied Physics Vol. 32; no. S3; p. 150
• Main Authors: Noda, Yasutoshi, Ohba, Masashi, Kurosawa, Toshio, Furukawa, Yoshitaka, Masumoto, Katashi, Oka, Yasuo
• Format: Journal Article
• Language: English
• Published: 30.12.1993
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAPS.32S3.150

The crystal growth of CdSiAs 2 by chemical transport was investigated by using I 2 , and CdCl 2 and CdBr 2 as the source of Cl 2 and Br 2 respectively, for the transport agent. The plate and needle form crystals were grown at the growth zone by CdBr 2 , while no growth by I 2 . In case by CdCl 2 , no transport occurs and the biggest single crystal with the dimensions of 8×3×2 mm 3 was obtained at the source zone. The single crystals transported by using CdBr 2 had a good-quality judged from no hollow in the crystals and photoluminescence measurement, although the dimensions did not exceed those by CdCl 2 . The bulk crystal boules were grown by vapor-liquid-solid growth process using CdBr 2 . The result suggests a possibility of growing a large-size and good-quality single crystal of CdSiAs 2 .