A snap-shot mode cryogenic readout circuit for QWIP IR FPAs
The design and measurement of a snap-shot mode cryogenic readout circuit（ROIC） for GaAs/AlGaAs QWIP FPAs was reported.CTIA input circuits with pixei level built-in electronic injection transistors were proposed to test the chip before assembly with a detector array.Design optimization techniques for...
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| Published in | Journal of semiconductors no. 2; pp. 88 - 93 |
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| Main Author | |
| Format | Journal Article |
| Language | Chinese English |
| Published |
01.02.2010
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/31/2/025012 |
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| Abstract | The design and measurement of a snap-shot mode cryogenic readout circuit（ROIC） for GaAs/AlGaAs QWIP FPAs was reported.CTIA input circuits with pixei level built-in electronic injection transistors were proposed to test the chip before assembly with a detector array.Design optimization techniques for cryogenic and low power are analyzed.An experimental ROIC chip of a 128×128 array was fabricated in 0.35μm CMOS technology.Measurements showed that the ROIC could operate at 77 K with low power dissipation of 35 mW.The chip has a pixel charge capacity of 2.57×10^6 electrons and transimpedance of 1.4×10^7Ω.Measurements showed that the transimpedance non-uniformity was less than 5%with a 10 MHz readout speed and a 3.3 V supply voltage. |
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| AbstractList | The design and measurement of a snap-shot mode cryogenic readout circuit（ROIC） for GaAs/AlGaAs QWIP FPAs was reported.CTIA input circuits with pixei level built-in electronic injection transistors were proposed to test the chip before assembly with a detector array.Design optimization techniques for cryogenic and low power are analyzed.An experimental ROIC chip of a 128×128 array was fabricated in 0.35μm CMOS technology.Measurements showed that the ROIC could operate at 77 K with low power dissipation of 35 mW.The chip has a pixel charge capacity of 2.57×10^6 electrons and transimpedance of 1.4×10^7Ω.Measurements showed that the transimpedance non-uniformity was less than 5%with a 10 MHz readout speed and a 3.3 V supply voltage. |
| Author | 马文龙 石寅 张耀辉 刘洪冰 谢保健 |
| AuthorAffiliation | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China |
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| Notes | ROIC transimpedance non-uniformity CTIA cryogenic QWIP; ROIC; CTIA; cryogenic; transimpedance non-uniformity QWIP TN4 11-5781/TN TN215 |
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| Snippet | The design and measurement of a snap-shot mode cryogenic readout circuit（ROIC） for GaAs/AlGaAs QWIP FPAs was reported.CTIA input circuits with pixei level... |
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| StartPage | 88 |
| SubjectTerms | AlGaAs 低功耗设计 低温 快照模式 电子喷射 芯片组装 读出电路 量子阱红外探测器 |
| Title | A snap-shot mode cryogenic readout circuit for QWIP IR FPAs |
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