A snap-shot mode cryogenic readout circuit for QWIP IR FPAs

• Published in: Journal of semiconductors no. 2; pp. 88 - 93
• Main Author: 马文龙 石寅 张耀辉 刘洪冰 谢保健
• Format: Journal Article
• Language: Chinese; English
• Published: 01.02.2010
• Subjects: AlGaAs; 低功耗设计; 低温; 快照模式; 电子喷射; 芯片组装; 读出电路; 量子阱红外探测器
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/31/2/025012

The design and measurement of a snap-shot mode cryogenic readout circuit（ROIC） for GaAs/AlGaAs QWIP FPAs was reported.CTIA input circuits with pixei level built-in electronic injection transistors were proposed to test the chip before assembly with a detector array.Design optimization techniques for cryogenic and low power are analyzed.An experimental ROIC chip of a 128×128 array was fabricated in 0.35μm CMOS technology.Measurements showed that the ROIC could operate at 77 K with low power dissipation of 35 mW.The chip has a pixel charge capacity of 2.57×10^6 electrons and transimpedance of 1.4×10^7Ω.Measurements showed that the transimpedance non-uniformity was less than 5%with a 10 MHz readout speed and a 3.3 V supply voltage.