High piezoelectricity and thermal stability of Ce-doped CaBi2Nb2O9-based high-temperature ceramics
As the industry advances at a swift pace, the demand for piezoelectric materials that exhibit both exceptional piezoelectric properties and excellent thermal stability is on the rise. However, it remains a significant challenge to achieve a balance between high piezoelectricity and thermal stability...
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Published in | Journal of the European Ceramic Society Vol. 45; no. 2; p. 116955 |
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Main Authors | , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.02.2025
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Subjects | |
Online Access | Get full text |
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Summary: | As the industry advances at a swift pace, the demand for piezoelectric materials that exhibit both exceptional piezoelectric properties and excellent thermal stability is on the rise. However, it remains a significant challenge to achieve a balance between high piezoelectricity and thermal stability in these materials. In this study, the phase structure, microstructure, and thermal stability of Ce-doped CaBi2Nb2O9 (CLBBN-xCe) high-temperature bismuth layer-structured piezoceramics are studied. It is revealed that the CLBBN-0.1Ce ceramics stand out with a piezoelectric coefficient d33 of 21.7 pC/N and a high Curie temperature of 907 °C. Furthermore, in situ temperature measurement demonstrates that the d33 has a change rate of 20.8 % from room temperature to 400 °C. We found that grain size refinement and domain morphology contribute to excellent electrical properties of the Ce-doped CaBi2Nb2O9-based ceramics. The superior performance of these ceramics suggests they hold great promise for high-temperature applications. |
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ISSN: | 0955-2219 |
DOI: | 10.1016/j.jeurceramsoc.2024.116955 |