High piezoelectricity and thermal stability of Ce-doped CaBi2Nb2O9-based high-temperature ceramics

• Published in: Journal of the European Ceramic Society Vol. 45; no. 2; p. 116955
• Main Authors: Lin, Tao, Fan, Wen-Ying, Tao, Chuan-Yang, Ma, Jun, Chen, Bin-Jie, Dou, Zhong-Shang, Shen, Bing-Lin, Ju, Min, Lu, Jing-Tong, Zhong, Mei-Peng, Zhou, Yu-Qing, Zhang, Mao-Hua, Gong, Wen, Yao, Fang-Zhou, Wang, Ke
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.02.2025
• Subjects: CaBi2Nb2O9; In situ measurement; Piezoelectric properties; Temperature-dependent d33; Thermal stability; In situ measurement; Piezoelectric properties; CaBi2Nb2O9; Thermal stability; Temperature-dependent d33
• ISSN: 0955-2219
• DOI: 10.1016/j.jeurceramsoc.2024.116955

As the industry advances at a swift pace, the demand for piezoelectric materials that exhibit both exceptional piezoelectric properties and excellent thermal stability is on the rise. However, it remains a significant challenge to achieve a balance between high piezoelectricity and thermal stability in these materials. In this study, the phase structure, microstructure, and thermal stability of Ce-doped CaBi2Nb2O9 (CLBBN-xCe) high-temperature bismuth layer-structured piezoceramics are studied. It is revealed that the CLBBN-0.1Ce ceramics stand out with a piezoelectric coefficient d33 of 21.7 pC/N and a high Curie temperature of 907 °C. Furthermore, in situ temperature measurement demonstrates that the d33 has a change rate of 20.8 % from room temperature to 400 °C. We found that grain size refinement and domain morphology contribute to excellent electrical properties of the Ce-doped CaBi2Nb2O9-based ceramics. The superior performance of these ceramics suggests they hold great promise for high-temperature applications.