High-Performance Gate-All-Around Poly-Si Thin-Film Transistors by Microwave Annealing With NH Plasma Passivation

This paper introduces nanoscale gate-all-around (GAA) n-MOS polycrystalline silicon thin-film transistors (poly-Si TFTs) by using microwave annealing (MWA). Experimental results of MWA GAA poly-Si TFTs indicate high performances with subthreshold swing (SS) of 105 mV/dec., and I ON /I OFF ratio of 1...

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Bibliographic Details
Published inIEEE transactions on nanotechnology Vol. 12; no. 4; pp. 636 - 640
Main Authors Yeh, Mu-Shih, Lee, Yao-Jen, Hung, Min-Feng, Liu, Kuan-Cheng, Wu, Yung-Chun
Format Journal Article
LanguageEnglish
Published IEEE 01.07.2013
Subjects
3-D ICs
Annealing
Gallium arsenide
Heat transfer
Logic gates
Microwave annealing (MWA)
Nanoscale devices
Plasmas
polycrystalline silicon (poly-Si)
rapid thermal annealing (RTA)
Thin film transistors
thin-film transistor (TFT)
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Summary:This paper introduces nanoscale gate-all-around (GAA) n-MOS polycrystalline silicon thin-film transistors (poly-Si TFTs) by using microwave annealing (MWA). Experimental results of MWA GAA poly-Si TFTs indicate high performances with subthreshold swing (SS) of 105 mV/dec., and I ON /I OFF ratio of 107 A/A. MWA reveals sufficient dopant activation efficiency, which is equivalent to rapid thermal annealing. Additionally, the short channel effect is reduced owing to the low-temperature process of MWA and superior gate control of the GAA structure. Moreover, using NH 3 plasma treatment further improves the device mobility, I ON /I OFF ratio, and SS. Importantly, the proposed MWA GAA poly-Si TFT with its high performance and low-temperature process is highly promising for advanced 3-D ICs.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2013.2265778