Generation of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO 2 deposition and subsequent high‐temperature annealing

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Bibliographic Details
Published inElectronics letters Vol. 57; no. 17; pp. 670 - 671
Main Authors Nanjo, T., Koyama, H., Imazawa, T., Kiyoi, A., Imai, A., Hayashida, T., Watahiki, T., Yamamoto, Y., Miura, N.
Format Journal Article
LanguageEnglish
Published 01.08.2021
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ISSN:0013-5194
1350-911X
DOI:10.1049/ell2.12213