Low driving voltage in an organic light-emitting diode using MoO3/NPB multiple quantum well structure in a hole transport layer

The driving voltage of an organic light-emitting diode（OLED） is lowered by employing molybdenum trioxide（MoO3）/N,N＇-bis（naphthalene-1-yl）-N,N＇-bis（phe-nyl）-benzidine（NPB） multiple quantum well（MQW） structure in the hole transport layer.For the device with double quantum well（DQW） structure of ITO/[M...

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Published in中国物理B：英文版 no. 2; pp. 511 - 514
Main Author 穆雪 吴晓明 华玉林 焦志强 申利莹 苏跃举 白娟娟 毕文涛 印寿根 郑加金
Format Journal Article
LanguageEnglish
Published 01.02.2013
Subjects
三氧化钼
多量子阱结构
控制装置
有机发光二极管
电荷转移复合物
移动设备
空穴传输层
驱动电压
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Summary:The driving voltage of an organic light-emitting diode（OLED） is lowered by employing molybdenum trioxide（MoO3）/N,N＇-bis（naphthalene-1-yl）-N,N＇-bis（phe-nyl）-benzidine（NPB） multiple quantum well（MQW） structure in the hole transport layer.For the device with double quantum well（DQW） structure of ITO/[MoO3（2.5 nm）/NPB（20 nm）]2/Alq3（50 nm）/LiF（0.8 nm）/Al（120 nm）],the turn-on voltage is reduced to 2.8 V,which is lowered by 0.4 V compared with that of the control device（without MQW structures）,and the driving voltage is 5.6 V,which is reduced by 1 V compared with that of the control device at the 1000 cd/m2.In this work,the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure,which is attributed not only to the reduced energy barrier between ITO and NPB,but also to the forming charge transfer complex between MoO3 and NPB induced by the interfacial doping effect of MoO3.
Bibliography:The driving voltage of an organic light-emitting diode（OLED） is lowered by employing molybdenum trioxide（MoO3）/N,N＇-bis（naphthalene-1-yl）-N,N＇-bis（phe-nyl）-benzidine（NPB） multiple quantum well（MQW） structure in the hole transport layer.For the device with double quantum well（DQW） structure of ITO/[MoO3（2.5 nm）/NPB（20 nm）]2/Alq3（50 nm）/LiF（0.8 nm）/Al（120 nm）],the turn-on voltage is reduced to 2.8 V,which is lowered by 0.4 V compared with that of the control device（without MQW structures）,and the driving voltage is 5.6 V,which is reduced by 1 V compared with that of the control device at the 1000 cd/m2.In this work,the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure,which is attributed not only to the reduced energy barrier between ITO and NPB,but also to the forming charge transfer complex between MoO3 and NPB induced by the interfacial doping effect of MoO3.
Mu Xue , WU Xiao-Ming , Hua Yu-Lin , Jiao Zhi-Qiang , Shen Li-Ying , Su Yue-Ju , Bai Juan-Juan , Bi Wen-Tao , Yin Shou-Gen , Zheng Jia-Jin（1） School of Materials Science and Engineering, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China ;2 ） College of Optoelectronics Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
organic light-emitting devices,low driving voltage,multiple quantum wells,charge transfer complex
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/22/2/027805