Magnetoresistance and Hall resistivity of semimetal WTe 2 ultrathin flakes
This article reports the characterization of WTe thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the...
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Published in | Nanotechnology Vol. 28; no. 14; p. 145704 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
England
07.04.2017
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Online Access | Get full text |
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Summary: | This article reports the characterization of WTe
thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe
thin films. |
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ISSN: | 0957-4484 1361-6528 |
DOI: | 10.1088/1361-6528/aa5abc |