Magnetoresistance and Hall resistivity of semimetal WTe 2 ultrathin flakes

This article reports the characterization of WTe thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the...

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Bibliographic Details
Published inNanotechnology Vol. 28; no. 14; p. 145704
Main Authors Luo, Xin, Fang, Chi, Wan, Caihua, Cai, Jialin, Liu, Yong, Han, Xiufeng, Lu, Zhihong, Shi, Wenhua, Xiong, Rui, Zeng, Zhongming
Format Journal Article
LanguageEnglish
Published England 07.04.2017
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Summary:This article reports the characterization of WTe thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe thin films.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/aa5abc