Synthesis and carbothermal nitridation mechanism of ultra-long single crystal α-Si 3 N 4 nanobelts
One-dimensional Si N nanostructures are desirable for constructing nanoscale electric and optoelectronic devices due to their peculiar morphologies. Herein, a facile and environmentally friendly catalyst-free method is proposed to synthesize ultra-long single crystal α-Si N nanobelts via carbotherma...
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Published in | Nanotechnology Vol. 31; no. 19; p. 194001 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
England
08.05.2020
|
Online Access | Get full text |
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Summary: | One-dimensional Si
N
nanostructures are desirable for constructing nanoscale electric and optoelectronic devices due to their peculiar morphologies. Herein, a facile and environmentally friendly catalyst-free method is proposed to synthesize ultra-long single crystal α-Si
N
nanobelts via carbothermal nitridation of carbon nanotubes at 1750 °C. The obtained α-Si
N
nanobelts with a flat surface (thickness of ∼150 nm, length of several millimeters) exhibited an extremely high aspect ratio, perfect crystal structure, and high specific surface area of 7.34-10.09 m
g
. In addition, the width was increased from approximately 80 nm to 8 μm by increasing the holding time from 1 to 3 h. The nanobelt formation was governed by the vapor-solid (VS) reaction between SiO vapor, N
and carbon nanotubes, and the vapor-vapor reaction between SiO, CO and N
. The former was responsible for the initial nucleation and successive base-growth of α-Si
N
nanotubes. The latter additionally contributed to the nanorod and subsequent proto-nanobelt formation and to the growth of the nanobelts. During high-temperature annealing at 1750 °C, the original Si
N
nanotubes gradually transformed into nanorods, and, finally, nanobelts with stable shapes as a result of surface energy minimization. |
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ISSN: | 0957-4484 1361-6528 |
DOI: | 10.1088/1361-6528/ab6fd7 |