Near Infrared Random Lasing in Multilayer MoS 2

We demonstrated room temperature near infrared (NIR) region random lasing (RL) (800-950 nm), with a threshold of nearly 500 μW, in ∼200 nm thick MoS /Au nanoparticles (NPs)/ZnO heterostructures using photoluminescence spectroscopy. The RL in the above system arises mainly due to the following three...

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Bibliographic Details
Published inACS omega Vol. 3; no. 10; pp. 14097 - 14102
Main Authors Dixit, Tejendra, Arora, Ankit, Krishnan, Ananth, Ganapathi, K Lakshmi, Nayak, Pramoda K, Rao, M S Ramachandra
Format Journal Article
LanguageEnglish
Published United States 31.10.2018
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Summary:We demonstrated room temperature near infrared (NIR) region random lasing (RL) (800-950 nm), with a threshold of nearly 500 μW, in ∼200 nm thick MoS /Au nanoparticles (NPs)/ZnO heterostructures using photoluminescence spectroscopy. The RL in the above system arises mainly due to the following three reasons: (1) enhanced multiple scattering because of Au/ZnO disordered structure, (2) exciton-plasmon coupling because of Au NPs, and (3) enhanced charge transfer from ZnO to thick MoS flakes. RL has recently attracted tremendous interest because of its wide applications in the field of telecommunication, spectroscopy, and specifically in biomedical tissue imaging. This work provides new dimensions toward realization of low power on-chip NIR random lasers made up of biocompatible materials.
ISSN:2470-1343
2470-1343
DOI:10.1021/acsomega.8b01287