A 65-nm ReRAM-Enabled Nonvolatile Processor With Time-Space Domain Adaption and Self-Write-Termination Achieving > 4\times Faster Clock Frequency and > 6\times Higher Restore Speed
With an ever-increasing demand for energy efficiency, processors with instant-on and zero leakage features are highly appreciated in energy harvesting as well as "normally off" applications. Recently, zero-standby power and fast switching nonvolatile processors (NVPs) have been proposed ba...
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Published in | IEEE journal of solid-state circuits Vol. 52; no. 10; pp. 2769 - 2785 |
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Main Authors | , , , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.10.2017
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Subjects | |
Online Access | Get full text |
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Summary: | With an ever-increasing demand for energy efficiency, processors with instant-on and zero leakage features are highly appreciated in energy harvesting as well as "normally off" applications. Recently, zero-standby power and fast switching nonvolatile processors (NVPs) have been proposed based on emerging nonvolatile memories (NVMs), such as ferroelectric RAM or spin-transfer-torque magnetic RAM. However, previous NVPs store all data to NVM upon every power interruption, resulting in high-energy consumption and degraded NVM endurance. This paper presents a 65-nm fully CMOS-logic-compatible ReRAM-based NVP supporting time-space domain adaption. It incorporates adaptive nonvolatile controller, nonvolatile flip-flops, and nonvolatile static random access memory (nvSRAM) with self-write termination. Data redundancy in both time and space domain is fully exploited to reduce store/restore time/energy and boost clock frequency. The NVP operates at >100 MHz and achieves 20 ns/0.45 nJ restore time/energy, realizing >6× and >6000× higher speed and energy efficiency of restore and >4× faster operating frequency compared with that of state of the art. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2017.2724024 |