Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon
The activation energy of thermal donor annealing increases from 1.7 to 2.5 eV upon preliminary heat treatment of Si crystals at 800C. It is believed that this results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and therefore to lie...
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| Published in | Semiconductor physics, quantum electronics, and optoelectronics Vol. 3; no. 1; pp. 11 - 14 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
06.01.2000
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| Online Access | Get full text |
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| Summary: | The activation energy of thermal donor annealing increases from 1.7 to 2.5 eV upon preliminary heat treatment of Si crystals at 800C. It is believed that this results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and therefore to lie at the basis of locally accelerated oxygen diffusion. (Author) |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 1560-8034 1605-6582 |
| DOI: | 10.15407/spqeo3.01.011 |