The High Electron Dose of Voltage Contrast Inspection for the Detection of Nickel Silicide Piping Defects

Nickel silicide process is used for the ohmic contact formation, but it could be spiking or piping into the substrate and lead to the device fail by leakage with the high temperature anneal. The piping defect by the nickel silicide process was proposed to be inspected using the electron beam inspect...

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Bibliographic Details
Published inECS transactions Vol. 60; no. 1; pp. 911 - 915
Main Authors Wang, Kai, Chen, Hunglin, Long, Yin, Ni, Qiliang, Fan, Rongwei
Format Journal Article
LanguageEnglish
Published 27.02.2014
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Summary:Nickel silicide process is used for the ohmic contact formation, but it could be spiking or piping into the substrate and lead to the device fail by leakage with the high temperature anneal. The piping defect by the nickel silicide process was proposed to be inspected using the electron beam inspection (EBI) at contact tungsten (W) plug CMP. This paper aims at the methodology of piping defect inspection and presents an optimized method to detect true piping defects by high electrons dosage. In this study, The mechanism of the leakage spread effect is described and with a series of experiments during the recipe optimizeation, the electron dosage, landing energy and beam direction were identified to increase the piping defect capture rate.
ISSN:1938-5862
1938-6737
DOI:10.1149/06001.0911ecst