SaDP Process Challenges and Solutions on NAND Flash Cell

• Published in: ECS transactions Vol. 60; no. 1; pp. 395 - 400
• Main Authors: Zhang, Yi-Ying, He, Qi-Yang, Zhang, Hai-Yang
• Format: Journal Article
• Language: English
• Published: 27.02.2014

Self-aligned double patterning (SaDP) technology has been successfully developed for three critical layers (AA, CG and M2) in NAND flash memories with 3X design rule. In SaDP process, the core performance is extremely critical for even/odd performance which will impact the final profile and etch dep...