Superior Plasmonic Photodetectors Based on Au@MoS 2 Core-Shell Heterostructures
Integrating plasmonic materials into semiconductor media provides a promising approach for applications such as photosensing and solar energy conversion. The resulting structures introduce enhanced light-matter interactions, additional charge trap states, and efficient charge-transfer pathways for l...
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Published in | ACS nano Vol. 11; no. 10; pp. 10321 - 10329 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
24.10.2017
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Subjects | |
Online Access | Get full text |
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Summary: | Integrating plasmonic materials into semiconductor media provides a promising approach for applications such as photosensing and solar energy conversion. The resulting structures introduce enhanced light-matter interactions, additional charge trap states, and efficient charge-transfer pathways for light-harvesting devices, especially when an intimate interface is built between the plasmonic nanostructure and semiconductor. Herein, we report the development of plasmonic photodetectors using Au@MoS
heterostructures-an Au nanoparticle core that is encapsulated by a CVD-grown multilayer MoS
shell, which perfectly realizes the intimate and direct interfacing of Au and MoS
. We explored their favorable applications in different types of photosensing devices. The first involves the development of a large-area interdigitated field-effect phototransistor, which shows a photoresponsivity ∼10 times higher than that of planar MoS
transistors. The other type of device geometry is a Si-supported Au@MoS
heterojunction gateless photodiode. We demonstrated its superior photoresponse and recovery ability, with a photoresponsivity as high as 22.3 A/W, which is beyond the most distinguished values of previously reported similar gateless photodetectors. The improvement of photosensing performance can be a combined result of multiple factors, including enhanced light absorption, creation of more trap states, and, possibly, the formation of interfacial charge-transfer transition, benefiting from the intimate connection of Au and MoS
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ISSN: | 1936-0851 1936-086X |
DOI: | 10.1021/acsnano.7b05071 |