Modification of Vapor Phase Concentrations in MoS 2 Growth Using a NiO Foam Barrier

• Published in: ACS nano Vol. 12; no. 2; pp. 1339 - 1349
• Main Authors: Lim, Yee-Fun, Priyadarshi, Kumar, Bussolotti, Fabio, Gogoi, Pranjal Kumar, Cui, Xiaoyang, Yang, Ming, Pan, Jisheng, Tong, Shi Wun, Wang, Shijie, Pennycook, Stephen J, Goh, Kuan Eng Johnson, Wee, Andrew T S, Wong, Swee Liang, Chi, Dongzhi
• Format: Journal Article
• Language: English
• Published: United States 27.02.2018
• Subjects: molybdenum disulfide; Raman spectroscopy; electronic transport measurement; chemical vapor deposition; angle-resolved photoemission spectroscopy
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.7b07682

Single-layer molybdenum disulfide (MoS ) has attracted significant attention due to its electronic and physical properties, with much effort invested toward obtaining large-area high-quality monolayer MoS films. In this work, we demonstrate a reactive-barrier-based approach to achieve growth of highly homogeneous single-layer MoS on sapphire by the use of a nickel oxide foam barrier during chemical vapor deposition. Due to the reactivity of the NiO barrier with MoO , the concentration of precursors reaching the substrate and thus nucleation density is effectively reduced, allowing grain sizes of up to 170 μm and continuous monolayers on the centimeter length scale being obtained. The quality of the monolayer is further revealed by angle-resolved photoemission spectroscopy measurement by observation of a very well resolved electronic band structure and spin-orbit splitting of the bands at room temperature with only two major domain orientations, indicating the successful growth of a highly crystalline and well-oriented MoS monolayer.