Mechanism for Leakage Reduction by La Incorporation in a \hbox\hbox\hbox Gate Stack

In this letter, we investigated a dominant mechanism for leakage reduction by the incorporation of La in a HfO 2 /SiO 2 gate stack. We compared the experimental data for the leakage current for the La-doped HfO 2 /SiO 2 gate stack and the calculation for tunnel current through the gate stack, assumi...

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Bibliographic Details
Published inIEEE electron device letters Vol. 34; no. 3; pp. 348 - 350
Main Authors Manabe, K., Watanabe, K., Jagannathan, H., Paruchuri, V. K.
Format Journal Article
LanguageEnglish
Published IEEE 01.03.2013
Subjects
Dielectrics
Hafnium compounds
Lanthanum
Leakage current
Logic gates
metal-oxide-semiconductor field-effect transistors (MOSFETs)
Modulation
Silicon
Substrates
threshold voltage
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Summary:In this letter, we investigated a dominant mechanism for leakage reduction by the incorporation of La in a HfO 2 /SiO 2 gate stack. We compared the experimental data for the leakage current for the La-doped HfO 2 /SiO 2 gate stack and the calculation for tunnel current through the gate stack, assuming that the La-induced dipole increases the barrier height of HfO 2 for electrons from the substrate. The agreement between the experimental data and calculated values strongly suggests that the main cause for leakage reduction is the effective barrier height modulation induced by the interface dipole.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2242040