Resistive Switching in \hbox Thin Films Using the Semiconducting In-Ga-Zn-O Electrode

Resistance switching behaviors in a Pt/In 2 Ga 2 ZnO 7 (IGZO)/TiO 2 /Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias...

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Bibliographic Details
Published inIEEE electron device letters Vol. 33; no. 4; pp. 582 - 584
Main Authors Seok, Jun Yeong, Kim, Gun Hwan, Kim, Jeong Hwan, Kim, Un Ki, Chung, Yoon Jang, Song, Seul Ji, Yoon, Jung Ho, Yoon, Kyung Jin, Lee, Min Hwan, Kim, Kyung Min, Hwang, Cheol Seong
Format Journal Article
LanguageEnglish
Published IEEE 01.04.2012
Subjects
Capacitance
Electrodes
Materials
Nonvolatile memory
Resistance
resistive switching random access memory (ReRAM)
Semiconductor diodes
Sputtering
Switches
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Summary:Resistance switching behaviors in a Pt/In 2 Ga 2 ZnO 7 (IGZO)/TiO 2 /Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias. Electroforming was possible only under the IGZO depletion condition due to the limited background leakage current flow. The repeated set/reset operation was also observed under the depletion condition. While the reset was possible, set was impeded by the high background current flow of the IGZO layer under the accumulation condition.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2182175