High-Performance 1- \mu\hbox GaN n-MOSFET With MgO/MgO- \hbox Stacked Gate Dielectrics

Gate length of 1-μm enhancement-mode n-channel GaN MOSFET with MgO and hybrid MgO-TiO 2 stacked gate dielectrics were characterized. The leakage current of a stacked MgO and hybrid MgO-TiO 2 MOS capacitor can be as low as 6.2 × 10 -9 and 6.9 × 10 -9 A/cm 2 at ±1-V bias, respectively. Through a self-...

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Bibliographic Details
Published inIEEE electron device letters Vol. 32; no. 3; pp. 306 - 308
Main Authors Lee, Ko-Tao, Huang, Chih-Fang, Gong, Jeng, Lee, Chia-Tien
Format Journal Article
LanguageEnglish
Published IEEE 01.03.2011
Subjects
Dielectric films
Dielectrics
Gallium nitride
III-V semiconductor
Leakage current
Logic gates
Metals
MOS capacitors
MOSFET
MOSFET circuits
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Summary:Gate length of 1-μm enhancement-mode n-channel GaN MOSFET with MgO and hybrid MgO-TiO 2 stacked gate dielectrics were characterized. The leakage current of a stacked MgO and hybrid MgO-TiO 2 MOS capacitor can be as low as 6.2 × 10 -9 and 6.9 × 10 -9 A/cm 2 at ±1-V bias, respectively. Through a self-aligned process, superior I D -V D and I D -V G electrical characteristics of a MOSFET were obtained. The maximum drain current is 3.69 × 10 -5 A/μm at a gate voltage V g of 8 V and a drain voltage V D of 10 V. The subthreshold swing is 342 mV/dec, and the I ON /I OFF is 5.7 × 10 4 .
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2096196