Electrical Characterization and Materials Stability Analysis of / Composite Oxides on n- MOS Capacitors With Different Annealing Temperatures

• Published in: IEEE electron device letters Vol. 34; no. 10; pp. 1229 - 1231
• Main Authors: Yueh Chin Lin, Hai Dang Trinh, Ting Wei Chuang, Iwai, Hiroshi, Kakushima, Kuniyuki, Ahmet, Parhat, Chun Hsiung Lin, Diaz, Carlos H., Hui Chen Chang, Jang, Simon M., Chang, Edward Yi
• Format: Journal Article
• Language: English
• Published: IEEE 01.10.2013
• Subjects: Aluminum oxide; Annealing; Hafnium compounds; InGaAs; Leakage currents; Logic gates; Materials; metal-oxide-semi-conductor (MOS); molecular beam deposition (MBD); MOS capacitors; post deposition annealing (PDA); {\rm HfO}_{2}; {\rm La}_{2}{\rm O}_{3}
• DOI: 10.1109/LED.2013.2272083
• ISSN: 0741-3106

In this letter, a high-k composite oxide composed of La 2 O 3 and HfO 2 is investigated for n-In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La 2 O 3 (0.8 nm)/HfO 2 (0.8 nm) on InGaAs with post deposition annealing at 500°C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D it ) of 7.0×10 11 cm -2 eV -1 , small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.