Electrical Characterization and Materials Stability Analysis of / Composite Oxides on n- MOS Capacitors With Different Annealing Temperatures
In this letter, a high-k composite oxide composed of La 2 O 3 and HfO 2 is investigated for n-In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La 2 O 3 (0.8 nm)/HfO 2 (0.8 nm) on InGaAs with post deposition annealin...
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Published in | IEEE electron device letters Vol. 34; no. 10; pp. 1229 - 1231 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.10.2013
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Subjects | |
Online Access | Get full text |
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Summary: | In this letter, a high-k composite oxide composed of La 2 O 3 and HfO 2 is investigated for n-In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La 2 O 3 (0.8 nm)/HfO 2 (0.8 nm) on InGaAs with post deposition annealing at 500°C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D it ) of 7.0×10 11 cm -2 eV -1 , small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2013.2272083 |