Composition-Graded AlInP/AlGaAsSb/InP Type-II DHBTs With f/f = \hbox\ \hbox

A type-II AlInP/AlGaAsSb/InP double heterojunction bipolar transistor (DHBT) with composition-graded Al content in the base is designed and grown by molecular beam epitaxy. Compared with composition-graded GaAsSb and InGaAsSb bases in DHBT, the graded AlGaAsSb base can generate a larger built-in ele...

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Bibliographic Details
Published inIEEE electron device letters Vol. 34; no. 1; pp. 33 - 35
Main Authors Huiming Xu, Iverson, E. W., Chi-Chih Liao, Cheng, K. Y., Feng, M.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.2013
Subjects
AlGaAsSb
Current measurement
double heterojunction bipolar transistor (DHBT)
Double heterojunction bipolar transistors
Indium phosphide
InP
Integrated circuits
Metals
millimeter wave
Performance evaluation
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Summary:A type-II AlInP/AlGaAsSb/InP double heterojunction bipolar transistor (DHBT) with composition-graded Al content in the base is designed and grown by molecular beam epitaxy. Compared with composition-graded GaAsSb and InGaAsSb bases in DHBT, the graded AlGaAsSb base can generate a larger built-in electric field, thus reducing base transit time and improving device speed. We have fabricated AlGaAsSb graded base DHBTs and demonstrated f T /f MAX = 450/510 GHz for a 0.3 × 2 μm 2 device.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2224090