Development of a Semiempirical Compact Model for DC/AC Cell Operation of }-Based ReRAMs

A semiempirical model that can simulate dc and pulse (ac) characteristics of filament-type HfO x -based resistance change random access memory (ReRAM) devices has been developed. Time-dependent device characteristics, because of the dynamic change in the filament size, were emulated using a modified...

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Bibliographic Details
Published inIEEE electron device letters Vol. 34; no. 9; pp. 1133 - 1135
Main Authors Jinwoo Noh, Minseok Jo, Chang Yong Kang, Gilmer, David, Kirsch, Paul, Lee, Jack C., Byoung Hun Lee
Format Journal Article
LanguageEnglish
Published IEEE 01.09.2013
Subjects
Data models
Hafnium compounds
Integrated circuit modeling
ion migration model
Materials
Resistance
resistance change random access memory (ReRAM)
semiempirical model
SPICE
Switches
{\rm HfO}_{\rm{x}} insulator layer
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Summary:A semiempirical model that can simulate dc and pulse (ac) characteristics of filament-type HfO x -based resistance change random access memory (ReRAM) devices has been developed. Time-dependent device characteristics, because of the dynamic change in the filament size, were emulated using a modified ion migration model. This model describes the difference between SET and RESET operations using a current crowding effect This model is a semiempirical model that can simultaneously match both dc and ac characteristics of HfOx-based ReRAM devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2271831