Differential Sensing of Substrate Noise in Mixed-Signal 0.18- \mu\hbox BiCMOS Technology

This paper presents an experimental study of substrate noise isolation in BF-Moat and P + /DT/n-well/DT/P + guard-ring-defined regions on a lightly doped substrate in the IBM 0.18-mum 7WL bipolar CMOS (BiCMOS) technology. Measurements of substrate noise voltage intentionally generated by an RF power...

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Bibliographic Details
Published inIEEE electron device letters Vol. 29; no. 8; pp. 898 - 901
Main Authors Haitao Dai, Knepper, R.W.
Format Journal Article
LanguageEnglish
Published IEEE 01.08.2008
Subjects
BiCMOS integrated circuits
Circuit noise
CMOS technology
Crosstalk
deep trench
guard ring
Isolation technology
n-well guard ring
Noise generators
Noise measurement
Power generation
Power measurement
Semiconductor device measurement
substrate noise
Voltage
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Summary:This paper presents an experimental study of substrate noise isolation in BF-Moat and P + /DT/n-well/DT/P + guard-ring-defined regions on a lightly doped substrate in the IBM 0.18-mum 7WL bipolar CMOS (BiCMOS) technology. Measurements of substrate noise voltage intentionally generated by an RF power amplifier and 64 digital pad drivers placed on the chip were taken at ten locations throughout the chip, using a capacitively coupled BiCMOS differential sensor circuit. The data show that both isolation structures exhibit effective ability to block out substrate noise for frequencies up to 2-3 GHz. Peak induced substrate noise voltage within the ldquoquiet regionsrdquo was lower by 12-15 dB from that outside the quiet areas.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2000842