Low Temperature Improvement Method on SiO} Resistive Random Access Memory Devices

To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO 2 ) fluid is used as a low temperature treatment. In this letter, the Zn:SiO x thin films are treated by SCCO 2 fluid mixed with pure water. After SCCO 2 fluid treatment...

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Bibliographic Details
Published inIEEE electron device letters Vol. 34; no. 4; pp. 511 - 513
Main Authors Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Hsing-Hua Wu, Kai-Huang Chen, Jung-Hui Chen, Tai-Fa Young, Tian-Jian Chu, Jian-Yu Chen, Chih-Hung Pan, Yu-Ting Su, Yong-En Syu, Cheng-Wei Tung, Geng-Wei Chang, Min-Chen Chen, Hui-Chun Huang, Ya-Hsiang Tai, Der-Shin Gan, Jia-Jie Wu, Ying Hu, Sze, S. M.
Format Journal Article
LanguageEnglish
Published IEEE 01.04.2013
Subjects
Bonding
Educational institutions
Nonvolatile memory
Resistance
resistive switching
Silicon
silicon oxide
Switches
Tin
Zinc
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Summary:To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO 2 ) fluid is used as a low temperature treatment. In this letter, the Zn:SiO x thin films are treated by SCCO 2 fluid mixed with pure water. After SCCO 2 fluid treatment, the resistive switching qualities of the Zn:SiO x thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO 2 -treated Zn:SiO x thin film is a proresistive switching properties mising material for RRAM applications due to its compatibility with portable flat panel display.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2248075