Ideal Photodetector Based on WS 2 /CuInP 2 S 6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation

• Published in: ACS applied materials & interfaces Vol. 16; no. 11; pp. 13927 - 13937
• Main Authors: Chen, Xiqiang, Zhang, Qiyang, Peng, Junhao, Gao, Wei, Yang, Mengmeng, Yu, Peng, Yao, Jiandong, Liang, Ying, Xiao, Ye, Zheng, Zhaoqiang, Li, Jingbo
• Format: Journal Article
• Language: English
• Published: United States 20.03.2024
• Subjects: ferroelectric polarization; 2D vdW heterostructure; band engineering; ideal photoresponse; photodetector
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.3c16815

Two-dimensional van der Waals (2D vdW) heterostructure photodetectors have garnered significant attention for their potential applications in next-generation optoelectronic systems. However, current 2D vdW photodetectors inevitably encounter compromises between responsivity, detectivity, and response time due to the absence of multilevel regulation for free and photoexcited carriers, thereby restricting their widespread applications. To address this challenge, we propose an efficient 2D WS /CuInP S vdW heterostructure photodetector by combining band engineering and ferroelectric modulation. In this device, the asymmetric conduction and valence band offsets effectively block the majority carriers (free electrons), while photoexcited holes are efficiently tunneled and rapidly collected by the bottom electrode. Additionally, the ferroelectric CuInP S layer generates polarization states that reconfigure the built-in electric field, reducing dark current and facilitating the separation of photocarriers. Moreover, photoelectrons are trapped during long-distance lateral transport, resulting in a high photoconductivity gain. Consequently, the device achieves an impressive responsivity of 88 A W , an outstanding specific detectivity of 3.4 × 10 Jones, and a fast response time of 37.6/371.3 μs. Moreover, the capability of high-resolution imaging under various wavelengths and fast optical communication has been successfully demonstrated using this device, highlighting its promising application prospects in future optoelectronic systems.